Infineon Technologies - BBY53-05W-E6327

  1. Home
  2. Infineon Technologies - BBY53-05W-E6327
BBY53-05W-E6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY53-05W-E6327
Description VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 5.3 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Peak Reflow Temperature (C): 260;
Datasheet BBY53-05W-E6327 Datasheet
In Stock307
NAME DESCRIPTION
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 6 V
Peak Reflow Temperature (C): 260
Sub-Category: Varactors
Surface Mount: YES
Nominal Diode Capacitance: 5.3 pF
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
307 $0.125 $38.375

Popular Products

Category Top Products

MDX582M by Texas Instruments

MDX582M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;
MMBV2108LT1 by Onsemi

MMBV2108LT1

Onsemi

MMBV2108LT1 by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and max power dissipation of 0.225 W. It is designed for high frequency to ultra high frequency applications due to its abrupt variable capacitance diode classification. The diode has a small outline package style with gull wing terminals and operates at a min breakdown voltage of 30 V.
1N4802 by Onsemi

1N4802

Onsemi

1N4802 by Onsemi is a Varactor Diode with 8.2 pF capacitance, 110 V breakdown voltage, and 0.5 W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.
1N4812 by Onsemi

1N4812

Onsemi

1N4812 by Onsemi is a varactor diode with 56pF nominal capacitance, abrupt variable capacitance classification, and 44V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.000000005uA.
BB207 by NXP Semiconductors

BB207

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC344 by Onsemi

SVC344

Onsemi

The Onsemi SVC344 is a varactor diode with 2 elements, common cathode configuration, and 430 pF nominal capacitance. It has a min breakdown voltage of 30 V and is ideal for applications requiring variable capacitance in RF circuits. The diode's plastic/epoxy package with cylindrical shape makes it suitable for bottom terminal position mounting.
BB809 by NXP Semiconductors

BB809

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB159T/R by NXP Semiconductors

BB159T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV2101ZL1 by Onsemi

MV2101ZL1

Onsemi

MV2101ZL1 by Onsemi is a single varactor diode with a min quality factor of 450, nominal capacitance of 6.8 pF, and breakdown voltage of 30 V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C, making it suitable for RF tuning circuits and frequency modulators.
BB804-2 by NXP Semiconductors

BB804-2

NXP Semiconductors

BB804-2 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse voltage of 16V, operates at up to 100 °C, and has a min capacitance ratio of 1.65. Ideal for RF tuning circuits, it comes in a compact surface mount package.
BB909B-AMMOPAK by NXP Semiconductors

BB909B-AMMOPAK

NXP Semiconductors

BB909B-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.
BB405B-TAPE-REEL by NXP Semiconductors

BB405B-TAPE-REEL

NXP Semiconductors

BB405B-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications.
BB911-TAPE-REEL by NXP Semiconductors

BB911-TAPE-REEL

NXP Semiconductors

BB911-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits, it ensures reliable performance in compact designs.
SMV1255-079LF by Skyworks Solutions

SMV1255-079LF

Skyworks Solutions

SMV1255-079LF by Skyworks: Varactor diode with 64pF capacitance, 15V breakdown voltage, and -55 to 125°C operating temp. Ideal for RF applications due to hyperabrupt diode classification and small outline package.
BB154T/R by NXP Semiconductors

BB154T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5448 by Onsemi

1N5448

Onsemi

1N5448 by Onsemi is a varactor diode with a min quality factor of 350 and max reverse current of 0.00000002 uA. It has a nominal capacitance of 22 pF, making it ideal for applications requiring variable capacitance diodes in electronic circuits. With an operating temperature range from -65 to 175 °C, this diode offers precise control over capacitance levels in RF tuning circuits.
1N5683 by Onsemi

1N5683

Onsemi

1N5683 by Onsemi is a varactor diode with 10pF nominal capacitance, abrupt variable capacitance classification, and 550 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.00000002uA and high breakdown voltage of 45V.
BBY42-T by NXP Semiconductors

BBY42-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
612 by Nte Electronics

612

Nte Electronics

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB249TRL by NXP Semiconductors

BB249TRL

NXP Semiconductors

BB249TRL by NXP Semiconductors is a single, surface-mount variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8 and comes in a long-form round glass package with isolated case connections. Ideal for RF tuning and voltage-controlled oscillators, it ensures reliable performance in compact designs.