Infineon Technologies - BBY5302WH6327XTSA1

  1. Home
  2. Infineon Technologies - BBY5302WH6327XTSA1
BBY5302WH6327XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY5302WH6327XTSA1
Description VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet BBY5302WH6327XTSA1 Datasheet
In Stock198
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Variable Capacitance Diode Classification: HYPERABRUPT
Config: SINGLE
Diode Type: VARIABLE CAPACITANCE DIODE
Frequency Band: ULTRA HIGH FREQUENCY
Diode Cap Tolerance: 9.43 %
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
Nominal Diode Capacitance: 5.3 pF
Diode Element Material: SILICON
No. of Terminals: 2
Minimum Diode Capacitance Ratio: 1.8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F2
Minimum Breakdown Voltage: 6 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 125 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
198 - -

Popular Products

Category Top Products

SVC276 by Onsemi

SVC276

Onsemi

SVC276 by Onsemi is a Varactor Diode with 76.75pF capacitance, 14V breakdown voltage, and 3.1 min capacitance ratio. Commonly used in RF applications for frequency tuning due to its variable capacitance diode type and dual element configuration. Operating at max temp of 125 °C, it's surface-mountable with a small outline package style.
BB174LXYL by NXP Semiconductors

BB174LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB207 by NXP Semiconductors

BB207

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB143T/R by NXP Semiconductors

BB143T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934050200135 by NXP Semiconductors

934050200135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB219TRL13 by NXP Semiconductors

BB219TRL13

NXP Semiconductors

BB219TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.
934057929115 by NXP Semiconductors

934057929115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE;
SVC321SPAD by Onsemi

SVC321SPAD

Onsemi

The Onsemi SVC321SPAD is a single varactor diode with a min quality factor of 200, ideal for applications requiring variable capacitance. With a max reverse current of 0.1 uA and a min breakdown voltage of 16 V, it operates at temperatures up to 100 °C, making it suitable for high-frequency tuning circuits.
BB159-T by NXP Semiconductors

BB159-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
TIV22 by Texas Instruments

TIV22

Texas Instruments

TIV22 by Texas Instruments is a single varactor diode with 11 pF capacitance, 30 V breakdown voltage, and 0.25 W power dissipation. Ideal for ultra high frequency applications due to its isolated case connection and silicon diode element material.
1N5697 by Onsemi

1N5697

Onsemi

1N5697 by Onsemi is a varactor diode with 8.2 pF nominal capacitance, 65 V breakdown voltage, and -65 to 175 °C operating temp range. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.
934055065135 by NXP Semiconductors

934055065135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB901235 by NXP Semiconductors

BB901235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB173LX by NXP Semiconductors

BB173LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
1SV262 by Toshiba

1SV262

Toshiba

The Toshiba 1SV262 is a single varactor diode with a max reverse current of 0.01 uA and a min breakdown voltage of 34 V. Its nominal capacitance is 35.5 pF, making it ideal for applications requiring variable capacitance in small outline packages.
BB146 by NXP Semiconductors

BB146

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB909A116 by NXP Semiconductors

BB909A116

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MDX585C by Texas Instruments

MDX585C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;
BB804T/R by NXP Semiconductors

BB804T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB910-AMMOPAK by NXP Semiconductors

BB910-AMMOPAK

NXP Semiconductors

BB910-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high to ultra-high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a min breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.