Infineon Technologies - BBY55-02V-H6327

  1. Home
  2. Infineon Technologies - BBY55-02V-H6327
BBY55-02V-H6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY55-02V-H6327
Description VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet BBY55-02V-H6327 Datasheet
In Stock623
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Variable Capacitance Diode Classification: HYPERABRUPT
Config: SINGLE
Diode Type: VARIABLE CAPACITANCE DIODE
Frequency Band: ULTRA HIGH FREQUENCY
Sub-Category: Varactors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Minimum Diode Capacitance Ratio: 2
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F2
Minimum Breakdown Voltage: 16 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Maximum Repetitive Peak Reverse Voltage: 16 V
Diode Cap Tolerance: 5.66 %
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Nominal Diode Capacitance: 18.6 pF
Diode Element Material: SILICON
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
623 $0.510 $317.730

Popular Products

Category Top Products

BB187,335 by NXP Semiconductors

BB187,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;
BB172 by NXP Semiconductors

BB172

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934053250335 by NXP Semiconductors

934053250335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX598D by Texas Instruments

MDX598D

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 25;
SVC353T by Onsemi

SVC353T

Onsemi

The Onsemi SVC353T is a Varactor Diode with 3 elements, common cathode config, and min. quality factor of 200. Ideal for RF applications due to its variable capacitance diode type, 16V breakdown voltage, and small outline package style. Suitable for surface mount designs requiring high-quality factor components.
SVC381-TL-E by Onsemi

SVC381-TL-E

Onsemi

SVC381-TL-E by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and Nominal Capacitance of 427.5 pF. Commonly used in RF applications due to its Variable Capacitance and Breakdown Voltage of 16V, it features a Small Outline package for surface mount assembly at temperatures up to 125 °C.
BB143,115 by NXP Semiconductors

BB143,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5456A by Onsemi

1N5456A

Onsemi

1N5456A by Onsemi is a varactor diode with 175 min. quality factor, 100 pF nominal capacitance, and 30 V min. breakdown voltage. Ideal for ultra-high frequency applications due to its abrupt variable capacitance classification. Package: Glass, Config: Single, Terminals: 2.
BB901212 by NXP Semiconductors

BB901212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
TIV25 by Texas Instruments

TIV25

Texas Instruments

TIV25 by Texas Instruments is a single varactor diode with 28pF capacitance, 30V breakdown voltage, and 80 min quality factor. Ideal for very high frequency applications due to its isolated case connection, 0.25W power dissipation, and silicon diode element material.
1N5445 by Onsemi

1N5445

Onsemi

1N5445 by Onsemi is a Varactor Diode with a Min Quality Factor of 400, Max Reverse Current of 0.02 uA, and Nominal Diode Capacitance of 15 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.
BB809 by NXP Semiconductors

BB809

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MV2201 by Knox Semiconductors

MV2201

Knox Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
934051270135 by NXP Semiconductors

934051270135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMV1206-079LF by Skyworks Solutions

SMV1206-079LF

Skyworks Solutions

SMV1206-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 11.6pF capacitance, 22V breakdown voltage, and -55 to 125°C operating range. Ideal for RF applications in small outline packages requiring variable capacitance control.
BB804W212 by NXP Semiconductors

BB804W212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC384S by Onsemi

SVC384S

Onsemi

The Onsemi SVC384S is a Varactor Diode with 2 elements, common cathode config, and 33V breakdown voltage. It has a min quality factor of 200 and operates up to 125 °C. Ideal for applications requiring variable capacitance diodes in electronic circuits.
BB804R215 by NXP Semiconductors

BB804R215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5465 by Onsemi

1N5465

Onsemi

1N5465 by Onsemi is a varactor diode with a min quality factor of 550 and max reverse current of 0.02 uA. It is used in applications requiring variable capacitance diodes, such as RF tuning circuits due to its abrupt variable capacitance classification. With a nominal capacitance of 15 pF and breakdown voltage of 30 V, it operates b/w -65 to 175 °C for various electronic designs.
BB135,135 by NXP Semiconductors

BB135,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;