Infineon Technologies - BBY57-02V-E6327

The Toshiba 1SV204 is a single varactor diode with a max reverse current of 0.01 uA and min breakdown voltage of 30 V. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. The diode's silicon element material and flat terminal form enhance its performance up to an operating temperature of 125 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMVL109T1 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. Ideal for very high frequency applications, this single-configured diode in a small outline package is surface mountable and has a max power dissipation of 0.2 W.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The NXP Semiconductors BB148 is a varactor diode with a max reverse current of 0.01 uA and nominal capacitance of 39.3 pF. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. With a min operating temperature of -55 °C and max of 125 °C, it offers reliable performance across a wide temperature range.

BB212-TAPE-REEL by NXP Semiconductors is a variable capacitance diode featuring a common cathode configuration with 2 elements. It has a min capacitance ratio of 22.5 and comes in a cylindrical plastic/epoxy package, ideal for RF tuning applications. With 3 terminals and through-hole mounting, it ensures reliable performance in electronic circuits.

1N5694 by Onsemi is a varactor diode with 82pF nominal capacitance, abrupt variable capacitance classification, and 225 min quality factor. It is used in RF applications for tuning circuits due to its high-quality factor and low reverse current of 0.00000002uA. Operating temperature ranges from -65 °C to 175°C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 16 V; Minimum Quality Factor: 200; Nominal Diode Capacitance: 55 pF;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .225 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 25;

BB910-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high to ultra-high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a min breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.

BB204G-TAPE-REEL by NXP Semiconductors is a variable capacitance diode ideal for RF tuning applications. It features a common cathode configuration with 2 elements, and a min capacitance ratio of 2.5. This cylindrical, through-hole component ensures reliable performance in electronic circuits.

MMVL535T1 by Onsemi is a varactor diode with 18.7 pF capacitance, 15 V peak reverse voltage, and 6.67% capacitance tolerance. It is ideal for ultra high frequency applications due to its variable capacitance design and small outline package style. The diode's gull wing terminal form and silicon element material make it suitable for surface mount configurations in electronic circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Nominal Diode Capacitance: .225 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 30;

1N4801 by Onsemi is a varactor diode with 6.8 pF capacitance, 100 V reverse voltage, and 0.005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;