Infineon Technologies - BBY57-02V-E6433

  1. Home
  2. Infineon Technologies - BBY57-02V-E6433
BBY57-02V-E6433 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY57-02V-E6433
Description VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 17.5 pF; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
Datasheet BBY57-02V-E6433 Datasheet
In Stock561
NAME DESCRIPTION
Package Style (Meter): SMALL OUTLINE
Variable Capacitance Diode Classification: HYPERABRUPT
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 10 V
Sub-Category: Varactors
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Nominal Diode Capacitance: 17.5 pF
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
561 - -

Popular Products

Category Top Products

BB133-T by NXP Semiconductors

BB133-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934055720115 by NXP Semiconductors

934055720115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBV432LT1G by Onsemi

MMBV432LT1G

Onsemi

MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.
BB173LX by NXP Semiconductors

BB173LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
SMMBV809LT1 by Onsemi

SMMBV809LT1

Onsemi

SMMBV809LT1 by Onsemi is a single hyperabrupt varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.225W power dissipation. Ideal for ultra high frequency applications requiring small outline rectangular package with gull wing terminals.
BB119133 by NXP Semiconductors

BB119133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB149 by NXP Semiconductors

BB149

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMV1405-040LF by Skyworks Solutions

SMV1405-040LF

Skyworks Solutions

SMV1405-040LF by Skyworks Solutions is a single varactor diode with abrupt capacitance classification. Operating in S band, it has a nominal capacitance of 1.305 pF and breakdown voltage of 30 V. Ideal for applications requiring variable capacitance diodes in temperature range -55 to 175°C.
5961-01-514-4880 by NXP Semiconductors

5961-01-514-4880

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 36 pF; JESD-609 Code: e3; Maximum Repetitive Peak Reverse Voltage: 30 V; Terminal Finish: MATTE TIN;
SVC353T by Onsemi

SVC353T

Onsemi

The Onsemi SVC353T is a Varactor Diode with 3 elements, common cathode config, and min. quality factor of 200. Ideal for RF applications due to its variable capacitance diode type, 16V breakdown voltage, and small outline package style. Suitable for surface mount designs requiring high-quality factor components.
BB659C02VH7902XTSA1 by Infineon Technologies

BB659C02VH7902XTSA1

Infineon Technologies

Infineon's BB659C02VH7902XTSA1 is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 min capacitance ratio. Ideal for very high frequency applications, it operates b/w -55°C to 150°C in small outline SMD package.
1N4800 by Onsemi

1N4800

Onsemi

The Onsemi 1N4800 is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.000000005 uA, and Nominal Diode Capacitance of 100 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.
MV1401 by Api Technologies

MV1401

Api Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SVC389-TL-E by Onsemi

SVC389-TL-E

Onsemi

SVC389-TL-E by Onsemi is a Varactor Diode with 2 elements, HYPERABRUPT classification, and 497.5 pF nominal capacitance. It operates in medium frequency bands, has a common cathode configuration, and is suitable for applications requiring variable capacitance diodes in small outline packages.
SVC270 by Onsemi

SVC270

Onsemi

SVC270 by Onsemi is a varactor diode with common cathode, 2 elements, and abrupt variable capacitance classification. It operates in very high frequency bands, has a min quality factor of 100, and a max reverse current of 0.05 uA. Ideal for applications requiring small outline package style and dual terminal position.
SVC325 by Onsemi

SVC325

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V;
KVX2162-23-0/TR by Microchip Technology

KVX2162-23-0/TR

Microchip Technology

KVX2162-23-0/TR by Microchip: Varactor Diode with 10pF capacitance, 22V breakdown voltage, and 400 min quality factor. Ideal for VHF to L band applications due to hyperabrupt diode classification. Operates b/w -55°C to 125°C, suitable for surface mount designs.
BB804Y215 by NXP Semiconductors

BB804Y215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LV2209RLRE by Onsemi

LV2209RLRE

Onsemi

LV2209RLRE by Onsemi is a single varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 25 V. It is used in applications requiring variable capacitance control, such as tuning circuits in RF communication systems. Operating temperature up to 150 °C makes it suitable for high-temperature environments.
934042930135 by NXP Semiconductors

934042930135

NXP Semiconductors

The NXP 934042930135 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact surface mount design ensures efficient space utilization in circuits.