Infineon Technologies - BBY58-02W-E6327

BB241TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 21, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi MV2115 is a single varactor diode with a min quality factor of 100, ideal for RF applications. With a nominal capacitance of 100 pF and a breakdown voltage of 30 V, it offers precise tuning capabilities in cylindrical package style. Its silicon element material and through-hole terminal form make it suitable for high-frequency circuits requiring variable capacitance control.

BB241 by NXP Semiconductors is a single, surface-mount varactor diode designed for very high frequency applications. It features a max reverse current of 0.01 µA and operates up to 100 °C with a breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, it offers excellent capacitance variation.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2109 by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode has a breakdown voltage of 30 V and is classified as an abrupt variable capacitance diode with through-hole terminal form.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 6.8 pF; Maximum Repetitive Peak Reverse Voltage: 25 V; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;

SVC364M by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 200 min quality factor. It has a min breakdown voltage of 16V and diode capacitance ratio of 17.5. Ideal for RF applications requiring variable capacitance diodes in small outline packages.

SVC236 by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 70 and Variable Capacitance Diode Classification: ABRUPT. It operates in the VERY HIGH FREQUENCY band, has a Max Reverse Current of 0.05 uA, and is suitable for applications requiring high-frequency signal modulation.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4789 by Onsemi is a varactor diode with max reverse current of 0.005 uA and nominal capacitance of 12 pF. It has a breakdown voltage of 28 V, making it ideal for RF tuning applications in temperature range -65 to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 35; Nominal Diode Capacitance: .1 pF;

1N4806 by Onsemi is a Varactor Diode with 18pF capacitance, 99V breakdown voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 150°C.

SMV1232-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 2.6pF capacitance, 15V breakdown voltage, and -55 to 175°C operating range. Ideal for S band applications, this surface-mount chip carrier diode offers precise tuning in RF circuits.

1N5469 by Onsemi is a varactor diode with 27pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 500 and low reverse current of 0.00000002uA.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF;

VARIABLE CAPACITANCE DIODE; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;