Infineon Technologies - BBY66-05W-H6327

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 30; Nominal Diode Capacitance: .45 pF;

PC123 by Api Technologies is a Varactor Diode with a Max Reverse Current of 0.5 uA, Nominal Capacitance of 15 pF, and Max Operating Temperature of 175°C. It is ideal for applications requiring precise voltage control in RF circuits due to its abrupt Variable Capacitance Diode Classification.

The Onsemi MV2115 is a single varactor diode with a min quality factor of 100, ideal for RF applications. With a nominal capacitance of 100 pF and a breakdown voltage of 30 V, it offers precise tuning capabilities in cylindrical package style. Its silicon element material and through-hole terminal form make it suitable for high-frequency circuits requiring variable capacitance control.

1N4794 by Onsemi is a varactor diode with 33pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.005uA and high breakdown voltage of 22V.

MVAM109 by Motorola is a single varactor diode with hyperabrupt capacitance classification. It has a min quality factor of 150, nominal capacitance of 460 pF, and operates b/w -55 to 125 °C. Ideal for applications requiring variable capacitance in electronic circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF; Minimum Quality Factor: 20;

MV2101 by Onsemi is a single varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this through-hole diode offers precise tuning capabilities in cylindrical package style.

VARIABLE CAPACITANCE DIODE; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BBY39TRL by NXP Semiconductors is a surface-mount varactor diode featuring a dual-element configuration with a min capacitance ratio of 8. It comes in a small outline package made of plastic/epoxy, ideal for RF tuning applications. This silicon-based diode offers reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2105RLRA by Onsemi is a varactor diode with a min quality factor of 400, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 15 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF;

NXP Semiconductors' BB131,135 Varactor Diodes are surface mountable with a nominal capacitance of 12pF. These diodes have a max reverse voltage of 30V and can withstand peak reflow temp of 260°C for up to 30s. Ideal for applications requiring variable capacitance like RF tuning circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi MV209RLRP is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this single-configured diode has a max power dissipation of 0.2 W. Its through-hole terminal form and silicon element material make it suitable for various RF tuning circuits.

1N5706 by Onsemi is a varactor diode with 47pF capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 42 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Minimum Quality Factor: 100;