Infineon Technologies - BC80740WE6433HTMA1

  1. Home
  2. Infineon Technologies - BC80740WE6433HTMA1
BC80740WE6433HTMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BC80740WE6433HTMA1
Description Small Signal Bipolar Transistors;
Datasheet BC80740WE6433HTMA1 Datasheet
In Stock206
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
206 - -

Popular Products

Category Top Products

BC847BV,115 by Nexperia

BC847BV,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;
2N2907A by Hi-tron Semiconductor

2N2907A

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222AUA by Optek Technology

JANTX2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Panjit International

MMBT3906

Panjit International

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Maximum Turn Off Time (toff): 300 ns; JESD-609 Code: e3;
BC847C by STMicroelectronics

BC847C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
PMBT2222A,215 by Nexperia

PMBT2222A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 150 Cel;
BC547ATA by Fairchild Semiconductor

BC547ATA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2905A by Itt Semiconductor

2N2905A

Itt Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC847B by ROHM

BC847B

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC547B by Microsemi

BC547B

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; JEDEC-95 Code: TO-92; JESD-609 Code: e0;
2N3906 by Motorola

2N3906

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-92;
BC547B by Lite-on Semiconductor

BC547B

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM;
2N2219A by M/a-com Technology Solutions

2N2219A

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Transistor Element Material: SILICON;
2N2905A by Onsemi

2N2905A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; JEDEC-95 Code: TO-39;
2N3904 by Plessey Semiconductors

2N3904

Plessey Semiconductors

NPN; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 100; Transistor Application: AMPLIFIER; Maximum Collector-Emitter Voltage: 40 V;
MMBT2907A-7-F by Diodes Incorporated

MMBT2907A-7-F

Diodes Incorporated

Diodes Inc. MMBT2907A-7-F is a PNP BJT transistor with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package.
2N2907AUB by Silicon Transistor

2N2907AUB

Silicon Transistor

2N2907AUB is a PNP silicon transistor with a max collector-emitter voltage of 60V and a max collector current of 0.6A. It is commonly used in small signal applications where low power dissipation and high DC current gain (hFE) are required.
PMBT2369,215 by Nexperia

PMBT2369,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Peak Reflow Temperature (C): 260;
MMBT3906,215 by Nexperia

MMBT3906,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
2N2219A by New Jersey Semiconductor Products

2N2219A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);