Infineon Technologies - BCP49

  1. Home
  2. Infineon Technologies - BCP49
BCP49 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCP49
Description NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;
Datasheet BCP49 Datasheet
In Stock560
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: DARLINGTON
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 2000
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
560 $0.131 $73.360

Popular Products

Category Top Products

2N2222AUA by Vpt Components

2N2222AUA

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON;
2N2905A by Micro Commercial Components

2N2905A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Package Body Material: METAL; Maximum Turn Off Time (toff): 300 ns;
2N3904 by Tt Electronics Plc

2N3904

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;
2N3904 by Diotec Semiconductor Ag

2N3904

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
JANTX2N2222A by Microsemi

JANTX2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3; JESD-609 Code: e0;
2N2219A by Crimson Semiconductor

2N2219A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2907A by Raytheon Semiconductor

2N2907A

Raytheon Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
NTE103 by Nte Electronics

NTE103

Nte Electronics

NTE103 by Nte Electronics is a NPN BJT transistor with max. power dissipation of 0.15W, hFE of 24, and VCE of 16V. Ideal for switching applications due to its Germanium element material and max. collector current of 0.15A in a cylindrical package shape with wire terminals.
BC817-25 by Philips Semiconductors

BC817-25

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
MMBT2907AWT1G by Rochester Electronics

MMBT2907AWT1G

Rochester Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
2N3904 by Renesas Electronics

2N3904

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
ULN2003AD by Texas Instruments

ULN2003AD

Texas Instruments

ULN2003AD by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications, it has a max VCE of 50V and comes in a small outline package style suitable for surface mount technology.
ULN2803AFWG by Toshiba

ULN2803AFWG

Toshiba

Toshiba's ULN2803AFWG is an NPN BJT with 8 Darlington banks, built-in diode and resistor. Ideal for switching applications, it has a max IC of 0.5A and VCE of 50V. With a hFE of 1000, this surface-mount transistor comes in a small outline package shape.
MMBT3906 by Zowie Technology

MMBT3906

Zowie Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
SBC807-40LT1G by Onsemi

SBC807-40LT1G

Onsemi

SBC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. It has VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.
JANTX2N2222AUB by Microchip Technology

JANTX2N2222AUB

Microchip Technology

JANTX2N2222AUB by Microchip is a NPN BJT transistor with hFE of 30, VCE of 50V, and IC of 0.8A. Ideal for switching applications, it operates up to 200°C and has ton of 35ns and toff of 300ns.
BC846B by Itt Semiconductor

BC846B

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC556BTF by Fairchild Semiconductor

BC556BTF

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
2N2222AUB by Silicon Transistor

2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC857BE6327HTSA1 by Infineon Technologies

BC857BE6327HTSA1

Infineon Technologies

BC857BE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and IC of 0.1A. It is used for switching applications in surface mount designs due to its high transition frequency of 250MHz. The package style is small outline with Gull Wing terminals, suitable for compact electronic devices.