Infineon Technologies - BCP5216H6327XTSA1

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BCP5216H6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCP5216H6327XTSA1
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
Datasheet BCP5216H6327XTSA1 Datasheet
In Stock165,833
NAME DESCRIPTION
Nominal Transition Frequency (fT): 125 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: SP000748096
2156-BCP5216H6327XTSA1-448
BCP 52-16 H6327-ND
BCP 52-16 H6327
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 60 V
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

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