Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BCP5316H6327XTSA1 |
| Description | PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; |
| Datasheet | BCP5316H6327XTSA1 Datasheet |
| In Stock | 10,948 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 125 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 1 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
2156-BCP5316H6327XTSA1TR BCP5316H6327XTSA1-ND BCP 53-16 H6327 SP000748124 BCP 53-16 H6327-ND 448-BCP5316H6327XTSA1TR |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 100 |
| JESD-609 Code: | e3 |
| Maximum Collector-Emitter Voltage: | 80 V |
