Infineon Technologies - BCP5316H6327XTSA1

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BCP5316H6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCP5316H6327XTSA1
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
Datasheet BCP5316H6327XTSA1 Datasheet
In Stock10,948
NAME DESCRIPTION
Nominal Transition Frequency (fT): 125 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Maximum Power Dissipation (Abs): 2 W
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
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