BCP5416E6433HTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BCP5416E6433HTMA1
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
Datasheet	BCP5416E6433HTMA1 Datasheet
In Stock	7

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Other Names:	2156-BCP5416E6433HTMA1-ITTR SP000010717 BCP5416E6433HTMA1DKR BCP 54-16 E6433TR-ND BCP 54-16 E6433DKR BCP5416E6433BTMA1 BCP5416E6433XT BCP 54-16 E6433CT BCP5416E6433 BCP 54-16 E6433-ND INFINFBCP5416E6433HTMA1 BCP5416E6433HTMA1CT BCP 54-16 E6433CT-ND BCP5416E6433HTMA1TR BCP 54-16 E6433DKR-ND BCP 54-16 E6433
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
Maximum Collector-Emitter Voltage:	45 V
Additional Features:	TR, 7 INCH; 1000
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
7	$0.250	$1.750

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.

TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;