Infineon Technologies - BCP69-10E6327

  1. Home
  2. Infineon Technologies - BCP69-10E6327
BCP69-10E6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCP69-10E6327
Description Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
Datasheet BCP69-10E6327 Datasheet
In Stock682
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
682 - -

Popular Products

Category Top Products

TIP112 by Diotec Semiconductor Ag

TIP112

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
TIP29C by Samsung

TIP29C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP110 by Micro Commercial Components

TIP110

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 1000; Terminal Form: THROUGH-HOLE;
TIP41C by General Transistor

TIP41C

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP120 by Central Semiconductor

TIP120

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
BD138 by Central Semiconductor

BD138

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP127 by Inchange Semiconductor

TIP127

Inchange Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
TIP36C by Tt Electronics Plc

TIP36C

Tt Electronics Plc

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Terminal Finish: Tin/Lead (Sn/Pb); JEDEC-95 Code: TO-247;
TIP127FP by New Jersey Semiconductor Products

TIP127FP

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Transistor Element Material: SILICON; No. of Elements: 1;
ZTX951 by Diodes Incorporated

ZTX951

Diodes Incorporated

ZTX951 by Diodes Inc. is a PNP BJT transistor with max. 60V VCE, 4A IC, and 120MHz fT. Ideal for power applications requiring high DC current gain (hFE) of min. 10, it operates up to 200°C making it suitable for various industrial uses like power supplies and motor control systems.
TIP36C by STMicroelectronics

TIP36C

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP122 by General Transistor

TIP122

General Transistor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
2N2219A by Vpt Components

2N2219A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;
TIP112 by Central Semiconductor

TIP112

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
JANTXV2N3055 by Vpt Components

JANTXV2N3055

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 70 V;
TIP50 by Central Semiconductor

TIP50

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP117 by Inchange Semiconductor

TIP117

Inchange Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V;
BD679 by Onsemi

BD679

Onsemi

BD679 by Onsemi is a NPN Power BJT with 40W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has hFE of 750 and can handle up to 80V collector-emitter voltage. This transistor operates at temperatures up to 150°C in a through-hole package style.
BD140 by Central Semiconductor

BD140

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
NJVMJD117T4G by Onsemi

NJVMJD117T4G

Onsemi

NJVMJD117T4G by Onsemi is a PNP BJT with Darlington configuration. Features 100V VCEO, 2A IC, and 20W power dissipation. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz.