Infineon Technologies - BCR08PNL6327

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BCR08PNL6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR08PNL6327
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G6;
Datasheet BCR08PNL6327 Datasheet
In Stock746
NAME DESCRIPTION
Nominal Transition Frequency (fT): 170 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 0.047
Maximum Operating Temperature: 150 Cel
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