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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BCR108S-E6327 |
Description | NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 21.364; |
Datasheet | BCR108S-E6327 Datasheet |
In Stock | 1,151 |
NAME | DESCRIPTION |
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Nominal Transition Frequency (fT): | 170 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .1 A |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Polarity or Channel Type: | NPN |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 70 |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 6 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 50 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Additional Features: | BUILT IN BIAS RESISTANCE RATIO IS 21.364 |
Peak Reflow Temperature (C): | 260 |
Moisture Sensitivity Level (MSL): | 1 |