BCR10PNH6327XTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BCR10PNH6327XTSA1
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 6;
Datasheet	BCR10PNH6327XTSA1 Datasheet
In Stock	30,013

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	130 MHz
Other Names:	BCR10PNH6327XTSA1CT BCR 10PN H6327CT BCR 10PN H6327-ND BCR 10PN H6327DKR-ND BCR 10PN H6327TR-ND BCR 10PN H6327CT-ND BCR10PNH6327 BCR10PNH6327XTSA1TR BCR10PNH6327XTSA1DKR BCR 10PN H6327DKR BCR 10PN H6327 SP000750782
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	30
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 1
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
30,013	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;

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