Infineon Technologies - BCR112E6327HTSA1

  1. Home
  2. Infineon Technologies - BCR112E6327HTSA1
BCR112E6327HTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCR112E6327HTSA1
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN;
Datasheet BCR112E6327HTSA1 Datasheet
In Stock27,790
NAME DESCRIPTION
Nominal Transition Frequency (fT): 140 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
27,790 - -

Popular Products

Category Top Products

BC847C by Allegro MicroSystems

BC847C

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
SBC847CDW1T1G by Onsemi

SBC847CDW1T1G

Onsemi

SBC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.38W, hFE of 420, and Vce of 45V. With a package style of small outline and surface mount capability, it operates b/w -55 to 150°C.
MMBT3906-TP by Micro Commercial Components

MMBT3906-TP

Micro Commercial Components

MMBT3906-TP by Micro Commercial Components is a PNP BJT transistor with hFE of 100. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications, this SMD transistor offers a transition frequency of 250MHz in a small outline package.
BC847B by Forward International Electronics

BC847B

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
BC847-C by Kec

BC847-C

Kec

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
2N2907AUB by Optek Technology

2N2907AUB

Optek Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N2905A by Crystalonics

2N2905A

Crystalonics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2219A by Fairchild Semiconductor

2N2219A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC547C by NXP Semiconductors

BC547C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
2N3906 by Allegro MicroSystems

2N3906

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
JANTX2N2222AUA by Crystalonics

JANTX2N2222AUA

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Terminal Form: NO LEAD;
BC847B by Rectron

BC847B

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
2N2907A by Hi-tron Semiconductor

2N2907A

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BCP56-16,115 by Nexperia

BCP56-16,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
2N2907A by Nte Electronics

2N2907A

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Package Body Material: METAL; Minimum DC Current Gain (hFE): 50;
BC847AE6327HTSA1 by Infineon Technologies

BC847AE6327HTSA1

Infineon Technologies

BC847AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 110, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C and has a collector current of 0.1A.
MMBT2907A by Micro Commercial Components

MMBT2907A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Finish: TIN LEAD;
2N2907A by STMicroelectronics

2N2907A

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC847CE6327HTSA1 by Infineon Technologies

BC847CE6327HTSA1

Infineon Technologies

BC847CE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 420. It has Vce of 45V and Ic of 0.1A, suitable for switching applications. This surface mount device comes in a small outline package with Gull Wing terminals, ideal for high-frequency operations up to 250MHz.
MMBT2222ALT1G by Rochester Electronics

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;