Infineon Technologies - BCR112F-E6327

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BCR112F-E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR112F-E6327
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1;
Datasheet BCR112F-E6327 Datasheet
In Stock1,635
NAME DESCRIPTION
Other Names: BCR112FE6327XT
BCR112FE6327
BCR 112F E6327-ND
SP000014062
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): 260
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
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