Infineon Technologies - BCR112L3E6327

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BCR112L3E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR112L3E6327
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet BCR112L3E6327 Datasheet
In Stock1,407
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
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