Infineon Technologies - BCR112WE6327

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BCR112WE6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR112WE6327
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1; Minimum DC Current Gain (hFE): 20;
Datasheet BCR112WE6327 Datasheet
In Stock929
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): 260
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
Moisture Sensitivity Level (MSL): 1
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