BCR129F by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BCR129F
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
Datasheet	BCR129F Datasheet
In Stock	656

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	150 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	120
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.25 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	BUILT-IN BIAS RESISTOR
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
656	-	-

The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;