Infineon Technologies - BCR133B6327

BCR133B6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR133B6327
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
Datasheet BCR133B6327 Datasheet
In Stock49
NAME DESCRIPTION
Nominal Transition Frequency (fT): 130 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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