Infineon Technologies - BCR133E6327HTSA1

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BCR133E6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR133E6327HTSA1
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30;
Datasheet BCR133E6327HTSA1 Datasheet
In Stock53,270
NAME DESCRIPTION
Nominal Transition Frequency (fT): 130 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Moisture Sensitivity Level (MSL): 1
Other Names: BCR 133 E6327
BCR133INTR
BCR133E6327BTSA1
BCR133INCT-ND
BCR133INDKR
BCR133INTR-NDR
BCR133INDKR-ND
BCR133INCT-NDR
INFINFBCR133E6327HTSA1
BCR133E6327XT
BCR133XTINTR
BCR133XTINTR-ND
BCR133E6327HTSA1DKR
BCR133E6327HTSA1TR
BCR133INCT
BCR133
BCR133XTINCT-ND
BCR133E6327
BCR133INTR-ND
BCR133E6327HTSA1CT
SP000010757
2156-BCR133E6327HTSA1
BCR133XTINCT
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Peak Reflow Temperature (C): 260
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Pricing (USD)

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