Infineon Technologies - BCR133E6327XT

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BCR133E6327XT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR133E6327XT
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
Datasheet BCR133E6327XT Datasheet
In Stock22,045
NAME DESCRIPTION
Nominal Transition Frequency (fT): 130 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Peak Reflow Temperature (C): 260
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