Infineon Technologies - BCR135E6327HTSA1

BCR135E6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR135E6327HTSA1
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Datasheet BCR135E6327HTSA1 Datasheet
In Stock42,773
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signals
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .2 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Moisture Sensitivity Level (MSL): 1
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