BCR135E6327HTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BCR135E6327HTSA1
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Datasheet	BCR135E6327HTSA1 Datasheet
In Stock	42,773

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	150 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signals
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Moisture Sensitivity Level (MSL):	1
Other Names:	BCR 135 E6327CT BCR135E6327HTSA1CT BCR 135 E6327CT-ND BCR 135 E6327DKR BCR 135 E6327DKR-ND BCR 135 E6327TR-ND BCR135E6327 BCR135E6327HTSA1TR BCR 135 E6327-ND BCR135E6327XT SP000010765 BCR135E6327BTSA1 BCR135E6327HTSA1DKR BCR 135 E6327
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	70
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 21.3636

Pricing (USD)

Qty.	Unit Price	Ext. Price
42,773	-	-

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