Infineon Technologies - BCR146L3E6327

  1. Home
  2. Infineon Technologies - BCR146L3E6327
BCR146L3E6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCR146L3E6327
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet BCR146L3E6327 Datasheet
In Stock546
NAME DESCRIPTION
Maximum Collector Current (IC): .07 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
546 - -

Popular Products

Category Top Products

JANTX2N2222AUB by New England Semiconductor

JANTX2N2222AUB

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906WT1G by Onsemi

MMBT3906WT1G

Onsemi

MMBT3906WT1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates b/w -55 to 150°C with a max. collector-emitter voltage of 40V and transition frequency of 250MHz.
MMBT2222A-7-F by Diodes Incorporated

MMBT2222A-7-F

Diodes Incorporated

Diodes Inc. MMBT2222A-7-F is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 40. Ideal for switching applications due to its small outline package style and fast turn-on/off times (35ns/285ns).
JANTX2N2222AUB by Crystalonics

JANTX2N2222AUB

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; No. of Elements: 1;
BC847BLT1G by Onsemi

BC847BLT1G

Onsemi

BC847BLT1G by Onsemi is a NPN BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 200, and fT of 100MHz. With max ratings of 45V VCEO and 0.1A IC, it operates b/w -55 to 150°C.
BC847BW,115 by NXP Semiconductors

BC847BW,115

NXP Semiconductors

NXP Semiconductors' BC847BW,115 is a NPN BJT transistor with VCEsat of 0.6V and hFE of 200. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. With a compact SOT package, it offers fast transition frequency at 100MHz.
2N2222A by Aeroflex/metelics

2N2222A

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
2N2222A by Bytesonic Electronics

2N2222A

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
MMBT3906 by Weitronic Enterprise

MMBT3906

Weitronic Enterprise

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
MMBT2222A,215 by NXP Semiconductors

MMBT2222A,215

NXP Semiconductors

NXP Semiconductors' MMBT2222A,215 is a NPN BJT transistor with 40V VCEO and 0.6A IC. It has a hFE of 40, fT of 300MHz, and Ptot of 0.25W. Ideal for switching applications in small outline packages with Gull Wing terminals.
2N3906 by Nte Electronics

2N3906

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
ULN2003AIDR by Texas Instruments

ULN2003AIDR

Texas Instruments

ULN2003AIDR by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications in surface mount designs. The package is rectangular with gull wing terminals, ideal for small outline configurations.
BC846B by Philips Components

BC846B

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 65 V;
BC847C,215 by Nexperia

BC847C,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2219A by Vishay Intertechnology

2N2219A

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Package Body Material: METAL; Qualification: Not Qualified;
MMBT2907A by STMicroelectronics

MMBT2907A

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
PIMN31,115 by Nexperia

PIMN31,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 6;
2N2219A by Asi Semiconductor

2N2219A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Yangzhou Yangjie Electronics

MMBT3906

Yangzhou Yangjie Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
SBC817-25LT1G by Good-ark Electronics

SBC817-25LT1G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;