Infineon Technologies - BCR146L3E6327

  1. Home
  2. Infineon Technologies - BCR146L3E6327
BCR146L3E6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCR146L3E6327
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet BCR146L3E6327 Datasheet
In Stock1,329
NAME DESCRIPTION
Other Names: BCR146L3E6327XT
SP000014860
BCR 146L3 E6327-ND
BCR146L3E6327
Maximum Collector Current (IC): .07 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,329 - -

Popular Products

Category Top Products

MMBT3906 by Infineon Technologies

MMBT3906

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A;
BC817-25 by Yangzhou Yangjie Electronics

BC817-25

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;
MMBT3906,215 by NXP Semiconductors

MMBT3906,215

NXP Semiconductors

NXP Semiconductors' MMBT3906,215 is a PNP BJT transistor with 3 terminals and max. power dissipation of 0.25W. Ideal for switching applications, it has a min. DC current gain of 30 and max. collector-emitter voltage of 40V. Operating temp ranges from -65 to 150°C, with peak reflow temp at 260°C and transition frequency at 250MHz.
2N2219A by Semicoa

2N2219A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847B,235 by Nexperia

BC847B,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2905A by Taitron Components

2N2905A

Taitron Components

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
ULN2003AD by Texas Instruments

ULN2003AD

Texas Instruments

ULN2003AD by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications, it has a max VCE of 50V and comes in a small outline package style suitable for surface mount technology.
BC547C by Continental Device India

BC547C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2222A by Microsemi

2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
2N2907A by Siemens

2N2907A

Siemens

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
BC817-25,215 by Nexperia

BC817-25,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G3;
2N2219A by Digitron Semiconductors

2N2219A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-T3;
MMBT3904 by Yangzhou Yangjie Electronics

MMBT3904

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Moisture Sensitivity Level (MSL): 1;
2N2222A by Onsemi

2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
JANTX2N2222AUA by Microsemi

JANTX2N2222AUA

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222AUB by Silicon Transistor

2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-40,235 by Nexperia

BC817-40,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
BC547C by Motorola

BC547C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222A by Raytheon Semiconductor

JANTX2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Terminal Form: WIRE;
SBC807-25LT1G by Onsemi

SBC807-25LT1G

Onsemi

SBC807-25LT1G by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.7V, min DC current gain (hFE) of 160, and max collector-emitter voltage of 45V. It is commonly used for switching applications in various industries.