Infineon Technologies - BCR151F-E6433

SMMBT2907ALT3G by Onsemi is a PNP BJT with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for small outline applications requiring high DC current gain and fast turn-on/off times. Suitable for automotive electronics due to AEC-Q101 compliance and peak reflow temperature of 260°C.

2N3904-AP by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 30, and max. operating temp of 150°C. Ideal for switching applications due to its max. collector-emitter voltage of 40V and transition frequency of 270MHz in a cylindrical package shape.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;

2N2222AUB by Microchip Technology is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 50V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/300ns) and high DC current gain (hFE=30).

JANTX2N2222A by Microchip Tech is a NPN BJT transistor with hFE of 30, VCE of 50V, and IC of 0.8A. Ideal for switching applications due to fast ton of 35ns and toff of 300ns. Operates in temp range -65°C to 200°C, complies with MIL-19500/255 standard.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON;

2N2907(A) by Digitron Semiconductors is a PNP BJT transistor with VCEsat of 0.4V, hFE of 100, and IC of 0.6A. Ideal for switching applications due to its fast ton of 45ns and toff of 100ns. Operates at a max temp of 175°C with a max VCE of 60V.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;

2N2219A by Space Power Electronics is a NPN small signal BJT transistor with a max power dissipation of 0.8W and a min DC current gain of 30. It is commonly used in applications requiring high frequency performance, such as RF amplifiers and oscillators.

MMBT2222ALT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it has a small outline package style and operates up to 150°C. With Gull Wing terminals and matte tin finish, it offers fast turn-on/off times of 35ns/285ns.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

2N2905A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on/off times (45ns/100ns) and high transition frequency (200MHz).

BC847-B by Infineon Technologies is a NPN BJT transistor with hFE of 200, ideal for amplifier applications. It has a max VCE of 45V and IC of 0.1A, operating up to 150°C. This surface-mount transistor in a small outline package offers a transition frequency of 250MHz.

BC547BTF by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 200 and nominal transition frequency of 300MHz, it offers reliable performance in a cylindrical package suitable for through-hole mounting. Operating at up to 150°C, this transistor has a max power dissipation of 0.625W making it versatile for various electronic designs.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Package Body Material: METAL;

Diodes Inc. MMBT3904T-7-F is a NPN BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal amplification in compact electronic devices due to its small outline package and high transition frequency. Suitable for surface mount applications requiring fast switching speeds and low power dissipation.