Infineon Technologies - BCR183L3E6327

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BCR183L3E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR183L3E6327
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
Datasheet BCR183L3E6327 Datasheet
In Stock161
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): 260
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Moisture Sensitivity Level (MSL): 1
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