Infineon Technologies - BCR183TE6327

  1. Home
  2. Infineon Technologies - BCR183TE6327
BCR183TE6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCR183TE6327
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1; No. of Elements: 1;
Datasheet BCR183TE6327 Datasheet
In Stock925
NAME DESCRIPTION
Other Names: SP000012807
BCR 183T E6327-ND
BCR183TE6327
BCR183TE6327XT
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): 260
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
925 - -

Popular Products

Category Top Products

SMMBT3906LT1G by Onsemi

SMMBT3906LT1G

Onsemi

SMMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and IC of 0.2A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance, 260°C peak reflow temp, and 250MHz fT.
ULN2803AFWG(O,ELM) by Toshiba

ULN2803AFWG(O,ELM)

Toshiba

Toshiba's ULN2803AFWG(O,ELM) is an NPN BJT with 8 Darlington banks, built-in diode/resistor. Ideal for switching applications, it has a hFE of 1000 and can handle up to 50V/0.5A. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BC847C by ROHM

BC847C

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3906 by Hi-tron Semiconductor

2N3906

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
ULN2803AFWG(C,ELHA) by Toshiba

ULN2803AFWG(C,ELHA)

Toshiba

Toshiba's ULN2803AFWG(C,ELHA) is an NPN BJT with 8 elements and 18 terminals. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications in small outline packages with Gull Wing terminals.
2N2222A by Semiconductor Technology

2N2222A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2905A by Continental Device India

2N2905A

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-40 by Taiwan Semiconductor

BC817-40

Taiwan Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2219A by Rectron

2N2219A

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2222AUA by Vpt Components

2N2222AUA

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON;
BC847C by Dc Components

BC847C

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222A by Motorola

JANTX2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Maximum Turn On Time (ton): 35 ns;
PMBT2369,215 by NXP Semiconductors

PMBT2369,215

NXP Semiconductors

NXP Semiconductors' PMBT2369,215 is a NPN BJT transistor for switching applications. It has a VCEsat of 0.25V, hFE of 20, and IC of 0.2A. With a max operating temperature of 150°C, it offers fast turn-on/off times (10ns/20ns) and high transition frequency (500MHz).
BC817DS,115 by Nexperia

BC817DS,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
BC847B by Rectron

BC847B

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
2N3904 by Space Power Electronics

2N3904

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
JANTX2N2222AUBT/R by Microchip Technology

JANTX2N2222AUBT/R

Microchip Technology

JANTX2N2222AUBT/R by Microchip is a NPN BJT transistor for switching applications. It has hFE of 30, Vce of 50V, and Ic of 0.8A. With a turn on time of 35ns and turn off time of 300ns, it's ideal for fast-switching circuits in military-grade electronics per MIL-19500/255 standards.
2N3904 by New Jersey Semiconductor Products

2N3904

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; Transistor Element Material: SILICON;
MMBT3904 by Nte Electronics

MMBT3904

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
2N2222A by Raytheon Semiconductor

2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;