Infineon Technologies - BCR189L3E6327

BCR189L3E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR189L3E6327
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;
Datasheet BCR189L3E6327 Datasheet
In Stock1,410
NAME DESCRIPTION
Other Names: SP000014874
BCR189L3E6327XT
BCR 189L3 E6327-ND
BCR189L3E6327
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
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