Infineon Technologies - BCR191E6327BTSA1

  1. Home
  2. Infineon Technologies - BCR191E6327BTSA1
BCR191E6327BTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCR191E6327BTSA1
Description Small Signal Bipolar Transistors;
Datasheet BCR191E6327BTSA1 Datasheet
In Stock972
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
972 - -

Popular Products

Category Top Products

2N2222A by Microchip Technology

2N2222A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
2N2907A by Micro Electronics

2N2907A

Micro Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2907A by Allegro MicroSystems

2N2907A

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3904TAR by Rochester Electronics

2N3904TAR

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;
MMBT3906 by Vishay Semiconductors

MMBT3906

Vishay Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
BC547CTFR by Onsemi

BC547CTFR

Onsemi

BC547CTFR by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, min. DC current gain of 420, and max. power dissipation of 0.625W. It is commonly used for switching applications due to its single configuration and cylindrical package shape.
FMMT458TA by Zetex Plc

FMMT458TA

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .225 A; Maximum VCEsat: .5 V;
2N2905A by Asi Semiconductor

2N2905A

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC847BW-7-F by Diodes Incorporated

BC847BW-7-F

Diodes Incorporated

Diodes Inc. BC847BW-7-F is a NPN BJT transistor with 200 min hFE, 45V VCEO, and 300MHz fT. Ideal for switching applications in small outline packages with Gull Wing terminals. Max power dissipation of 0.2W and operating temp up to 150°C make it suitable for various electronic designs.
BC817-25 by Itt Semiconductor

BC817-25

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Terminal Form: GULL WING; Maximum Collector-Emitter Voltage: 45 V;
JANTX2N2222AUB by Microsemi

JANTX2N2222AUB

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Reference Standard: MIL-19500/255; Maximum Collector-Emitter Voltage: 50 V;
MMBT2222A by Diotec Semiconductor Ag

MMBT2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC547C by Lite-on Semiconductor

BC547C

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
BC847B by Siemens

BC847B

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222AWT1G by Onsemi

MMBT2222AWT1G

Onsemi

MMBT2222AWT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, max collector current of 0.6A, and min DC current gain of 40. With a package style of small outline and surface mount capability, it operates at up to 150°C.
BC857C,215 by Nexperia

BC857C,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
BC817-25W,115 by Nexperia

BC817-25W,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
BC847B by National Semiconductor

BC847B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2907A by Raytheon Semiconductor

2N2907A

Raytheon Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC847C,215 by Nexperia

BC847C,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;