Infineon Technologies - BCR192TE6327

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BCR192TE6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR192TE6327
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet BCR192TE6327 Datasheet
In Stock2,506
NAME DESCRIPTION
Other Names: BCR192TE6327
BCR192TE6327XT
BCR 192T E6327-ND
SP000012808
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .25 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): 260
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
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