Infineon Technologies - BCR35PN-E6327

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BCR35PN-E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR35PN-E6327
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
Datasheet BCR35PN-E6327 Datasheet
In Stock508
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 70
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 4.7
Peak Reflow Temperature (C): 260
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