Infineon Technologies - BCR35PNE6327HTSA1

  1. Home
  2. Infineon Technologies - BCR35PNE6327HTSA1
BCR35PNE6327HTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCR35PNE6327HTSA1
Description Small Signal Bipolar Transistors;
Datasheet BCR35PNE6327HTSA1 Datasheet
In Stock428
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
428 - -

Popular Products

Category Top Products

NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.
BC547B by Lite-on Semiconductor

BC547B

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM;
MMBT2907A by Lite-on Semiconductor

MMBT2907A

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JESD-30 Code: R-PDSO-G3;
MMBT2907A by Infineon Technologies

MMBT2907A

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;
MMBT2222A-TP by Micro Commercial Components

MMBT2222A-TP

Micro Commercial Components

MMBT2222A-TP by Micro Commercial Components is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.35W, hFE of 75, and operates up to 150°C. Ideal for amplifier applications due to its small outline package style and high transition frequency of 300MHz.
BC817-40-7-F by Diodes Incorporated

BC817-40-7-F

Diodes Incorporated

BC817-40-7-F by Diodes Inc. is a NPN BJT transistor with 170 min hFE, 0.5A IC, and 45V VCE. Ideal for switching applications, it has a max power dissipation of 0.31W and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
PMBT2222A,215 by Nexperia

PMBT2222A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 150 Cel;
2N2219A by Micro Commercial Components

2N2219A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100;
JANTX2N2222AUB by Micropac Industries

JANTX2N2222AUB

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Transistor Application: SWITCHING;
2N3906 by Microsemi

2N3906

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3904 by Nexperia

MMBT3904

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;
BC847B by Diotec Semiconductor Ag

BC847B

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC847C,215 by NXP Semiconductors

BC847C,215

NXP Semiconductors

NXP Semiconductors' BC847C,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 420, it operates at max temp of 150°C. This GULL WING terminal transistor has a max IC of 0.1A and VCE of 45V, ideal for small outline packages in electronics.
2N2219A by Swampscott Electronics

2N2219A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N3904 by Fairchild Semiconductor

2N3904

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2219A by Asi Semiconductor

2N2219A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
SBC817-40LT1G by Onsemi

SBC817-40LT1G

Onsemi

SBC817-40LT1G by Onsemi is a NPN BJT transistor with 250 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.
BCY89 by Tt Electronics Plc

BCY89

Tt Electronics Plc

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .03 A; Package Shape: ROUND;
BC847B,235 by Nexperia

BC847B,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222AUA by Microchip Technology

JANTX2N2222AUA

Microchip Technology

JANTX2N2222AUA by Microchip is a NPN BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 0.5W, hFE of 30, and can handle up to 0.8A collector current. With a max operating temp of 200°C and fT of 250MHz, it meets MIL-19500/255 standards for high-performance electronics.