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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BCR35PNH6327XTSA1 |
| Description | NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; |
| Datasheet | BCR35PNH6327XTSA1 Datasheet |
| In Stock | 67,566 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 150 MHz |
| Other Names: |
2156-BCR35PNH6327XTSA1 SP000757922 BCR35PNH6327XTSA1CT BCR 35PN H6327CT BCR 35PN H6327 BCR 35PN H6327-ND BCR35PNH6327 BCR35PNH6327XTSA1DKR BCR 35PN H6327DKR-ND BCR35PNH6327XTSA1TR BCR 35PN H6327TR-ND BCR 35PN H6327DKR IFEINFBCR35PNH6327XTSA1 BCR 35PN H6327CT-ND |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | NPN AND PNP |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 70 |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 6 |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
| Reference Standard: | AEC-Q101 |
| Moisture Sensitivity Level (MSL): | 1 |









