Infineon Technologies - BCR523U

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BCR523U by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCR523U
Description NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
Datasheet BCR523U Datasheet
In Stock766
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 6
Maximum Power Dissipation (Abs): .33 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 70
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTOR RATIO IS 0.1
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

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