Infineon Technologies - BCV61BE6433XT

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BCV61BE6433XT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCV61BE6433XT
Description NPN; Configuration: CURRENT MIRROR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G4;
Datasheet BCV61BE6433XT Datasheet
In Stock852
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: CURRENT MIRROR
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 4
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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