Infineon Technologies - BCW68HE6327

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BCW68HE6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BCW68HE6327
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
Datasheet BCW68HE6327 Datasheet
In Stock32,712
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .8 A
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .33 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 45 V
Peak Reflow Temperature (C): 260
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