Infineon Technologies - BDP953H6327XTSA1

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BDP953H6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BDP953H6327XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 100 V;
Datasheet BDP953H6327XTSA1 Datasheet
In Stock7,218
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Other Names: SP000748526
BDP 953 H6327-ND
BDP953H6327XTSA1-ND
448-BDP953H6327XTSA1TR
BDP 953 H6327
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 15
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
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