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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BF1012E6327 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Position: DUAL; Minimum Power Gain (Gp): 20 dB; |
Datasheet | BF1012E6327 Datasheet |
In Stock | 927 |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 20 dB |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | .025 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 16 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DUAL GATE, DEPLETION MODE |
Additional Features: | LOW NOISE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Case Connection: | SOURCE |