Infineon Technologies - BF5020WH6327XTSA1

  1. Home
  2. Infineon Technologies - BF5020WH6327XTSA1
BF5020WH6327XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BF5020WH6327XTSA1
Description RF Small Signal Field-Effect Transistors;
Datasheet BF5020WH6327XTSA1 Datasheet
In Stock592
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
592 - -

Popular Products

Category Top Products

BF994SA-GS08 by Temic Semiconductors

BF994SA-GS08

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;
BF513-T by NXP Semiconductors

BF513-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Terminal Form: GULL WING;
MPF102RLRA by Onsemi

MPF102RLRA

Onsemi

MPF102RLRA by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND, it features a DEPLETION MODE and 3 pF Max Crss. Operating at up to 125 °C, this THROUGH-HOLE transistor has a 0.2 W power dissipation in a CYLINDRICAL package.
934028860235 by NXP Semiconductors

934028860235

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Additional Features: LOW NOISE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
3SK168E by Onsemi

3SK168E

Onsemi

N-CHANNEL; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
2N3819 by Micro Electronics

2N3819

Micro Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE;
D2089UK by Tt Electronics Plc

D2089UK

Tt Electronics Plc

D2089UK by Tt Electronics Plc is an N-CHANNEL RF FET with 65V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring METAL-OXIDE SEMICONDUCTOR tech, it has 0.5pF Crss and GOLD finish terminals in a DISK BUTTON package.
BF998A-GS08 by Vishay Semiconductors

BF998A-GS08

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
2N5245 by Texas Instruments

2N5245

Texas Instruments

2N5245 by Texas Instruments is an N-CHANNEL RF FET with 10 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max power dissipation of 0.36 W at 150 °C. With a very high frequency band, this JUNCTION FET has 3 terminals and 1 pF Crss.
FHX35X by Fujitsu

FHX35X

Fujitsu

Fujitsu's FHX35X is an N-CHANNEL RF FET for AMPLIFIER applications in KU BAND. With 8.5 dB Power Gain, it operates in DEPLETION MODE at 175 °C max temp. Featuring HIGH ELECTRON MOBILITY tech and GALLIUM ARSENIDE material, this SINGLE configuration transistor is a surface mount with 4 terminals.
J308RL1 by Onsemi

J308RL1

Onsemi

J308RL1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF545A-TAPE-7 by NXP Semiconductors

BF545A-TAPE-7

NXP Semiconductors

BF545A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF511T/R by NXP Semiconductors

BF511T/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
2N3819 by Solid State Devices

2N3819

Solid State Devices

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3; Qualification: Not Qualified;
2N4416A by NXP Semiconductors

2N4416A

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Operating Mode: DEPLETION MODE;
ATF-38143-BLKG by Broadcom

ATF-38143-BLKG

Broadcom

Broadcom ATF-38143-BLKG is a N-CHANNEL FET for X BAND applications. Features 15 dB Gp, 4.5 V DS Breakdown Voltage, and 0.58 W Power Dissipation. Ideal for RF AMPLIFIER circuits with DEPLETION MODE operation in SMALL OUTLINE package.
2N5248 by Texas Instruments

2N5248

Texas Instruments

2N5248 by Texas Instruments is an N-CHANNEL FET with a PLASTIC/EPOXY body. Operating in DEPLETION MODE, it's ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.36W and feedback capacitance of 2pF, it offers high performance in a CYLINDRICAL package.
NE3210S01-T1B-A by Renesas Electronics

NE3210S01-T1B-A

Renesas Electronics

N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;
934028850235 by NXP Semiconductors

934028850235

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; No. of Terminals: 4; Transistor Element Material: SILICON;
FLC103WG by Fujitsu Semiconductor America

FLC103WG

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION;