Infineon Technologies - BF930

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BF930 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BF930
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 12 V;
Datasheet BF930 Datasheet
In Stock60
NAME DESCRIPTION
Minimum Power Gain (Gp): 29 dB
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .04 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DUAL GATE, DEPLETION MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Case Connection: SOURCE
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