Infineon Technologies - BF970

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;

BCY89 by Texas Instruments is an NPN transistor with a max power dissipation of 0.15W and min DC current gain of 100. It operates at a max temperature of 175°C, with a max collector current of 0.03A and nominal transition frequency of 10MHz. This transistor is commonly used in applications requiring low power dissipation and high DC current gain, such as signal amplification in electronic circuits.

BDX53C by Texas Instruments is an NPN Darlington transistor with 60W power dissipation, 750 min hFE, and 8A collector current. It operates up to 150°C and has a transition frequency of 20MHz. Ideal for high-power applications in various electronic circuits.

FDN360P-NBGT003B by Fairchild Semiconductor is a P-CHANNEL transistor with 2A max drain current and 0.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high efficiency and low power consumption in temperatures up to 150°C.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

2N3055 by Plessey Semiconductors is an NPN transistor with a max power dissipation of 115W and a min DC current gain of 20. It can handle a max collector current of 15A and has a nominal transition frequency of 2.5MHz. This transistor is commonly used in various applications requiring high power amplification or switching capabilities.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

Other Transistors;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): .6 A;