Infineon Technologies - BFP182E6327

BFP182E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFP182E6327
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .035 A;
Datasheet BFP182E6327 Datasheet
In Stock404
NAME DESCRIPTION
Nominal Transition Frequency (fT): 8000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .035 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: BIP RF Small Signal
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): .25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 70
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Maximum Collector-Base Capacitance: .45 pF
Peak Reflow Temperature (C): NOT SPECIFIED
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