Infineon Technologies - BFP196WH6740XTSA1

  1. Home
  2. Infineon Technologies - BFP196WH6740XTSA1
BFP196WH6740XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFP196WH6740XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .15 A; JESD-30 Code: R-PDSO-G4;
Datasheet BFP196WH6740XTSA1 Datasheet
In Stock216
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Maximum Collector-Emitter Voltage: 12 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Highest Frequency Band: L BAND
Maximum Collector-Base Capacitance: 1.3 pF
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
216 - -

Popular Products

Category Top Products

JANS2N3866AUB by Defense Logistics Agency

JANS2N3866AUB

Defense Logistics Agency

JANS2N3866AUB by Defense Logistics Agency is an NPN RF BJT with 3.5 pF max collector-base capacitance, 30V max collector-emitter voltage, and 0.4A max collector current. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal-sealed co-fired package body material and small outline package style.
2N5109 by STMicroelectronics

2N5109

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .5 A;
2N2907AUBC by Vpt Components

2N2907AUBC

Vpt Components

RF Small Signal Bipolar Transistors;
BF824,215 by Nexperia

BF824,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; JESD-609 Code: e3;
BFR92ARGELB-GS08 by Vishay Semiconductors

BFR92ARGELB-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
MMBTH10LT3G by Onsemi

MMBTH10LT3G

Onsemi

MMBTH10LT3G by Onsemi is an NPN RF BJT with a max fT of 650 MHz, hFE of 60, and VCEO of 25V. Ideal for UHF applications due to its small outline package and high transition frequency. Suitable for surface mount designs requiring ultra-high frequency band performance.
934067711235 by NXP Semiconductors

934067711235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
CA3086 by Harris Semiconductor

CA3086

Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: THROUGH-HOLE;
2N3866A by Asi Semiconductor

2N3866A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
MSC80185 by STMicroelectronics

MSC80185

STMicroelectronics

STMicroelectronics' MSC80185 is an NPN BJT transistor with a min hFE of 15 and fT of 3200 MHz. It operates at a max temperature of 200 °C, suitable for L Band amplification applications. The package style is post/stud mount with a round shape and 4 terminals in a radial position.
BFU725F/N1,115 by NXP Semiconductors

BFU725F/N1,115

NXP Semiconductors

BFU725F/N1,115 by NXP Semiconductors is an NPN RF Small Signal BJT with a max power dissipation of 0.136W and min DC current gain of 160. It features silicon germanium material and can handle a max collector current of 0.04A. Ideal for applications requiring high-frequency signal amplification in compact electronic devices.
MCH4014-TL-H by Onsemi

MCH4014-TL-H

Onsemi

MCH4014-TL-H by Onsemi is an NPN RF BJT with max power dissipation of 0.35W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.
BFS17PE6433 by Infineon Technologies

BFS17PE6433

Infineon Technologies

The Infineon Technologies BFS17PE6433 is an NPN RF BJT transistor for ultra-high frequency band applications. With a max operating temp of 150°C, it offers a transition frequency of 2500 MHz and a collector-emitter voltage of 15V. Ideal for amplifier circuits, this transistor has a small outline package with gull wing terminals.
CPH6003A-TL-E by Onsemi

CPH6003A-TL-E

Onsemi

CPH6003A-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.8W and min hFE of 100. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.
BFP640FESDH6327XTSA1 by Infineon Technologies

BFP640FESDH6327XTSA1

Infineon Technologies

BFP640FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and fT of 46GHz. It is used for X Band amplifier applications in automotive electronics, meeting AEC-Q101 standards. This surface-mount device has a small outline package with 4 terminals and silicon germanium carbon element material.
2N2222 by Hi-tron Semiconductor

2N2222

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MPSH10 by National Semiconductor

MPSH10

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
START405TR by STMicroelectronics

START405TR

STMicroelectronics

START405TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.045 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
MPSH10RLRE by Onsemi

MPSH10RLRE

Onsemi

MPSH10RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp rating (150 °C). The transistor's through-hole package makes it suitable for various cylindrical style designs.
HFA3127RZ by Renesas Electronics

HFA3127RZ

Renesas Electronics

HFA3127RZ by Renesas Electronics is a NPN RF BJT with 5 elements, ideal for amplifier applications. It operates in the ultra high frequency band up to 8V and has a transition frequency of 8000 MHz. This chip carrier package features separate configuration with matte tin finish, suitable for surface mount assembly.