Infineon Technologies - BFP405E6327HTSA1

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BFP405E6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFP405E6327HTSA1
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .012 A; Transistor Element Material: SILICON;
Datasheet BFP405E6327HTSA1 Datasheet
In Stock320
NAME DESCRIPTION
Nominal Transition Frequency (fT): 25000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .012 A
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: X BAND
Case Connection: EMITTER
Polarity or Channel Type: NPN
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 4.5 V
Additional Features: HIGH RELIABILITY
Maximum Collector-Base Capacitance: .08 pF
Peak Reflow Temperature (C): 260
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