Infineon Technologies - BFP420E6433

BFP420E6433 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFP420E6433
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;
Datasheet BFP420E6433 Datasheet
In Stock614
NAME DESCRIPTION
Nominal Transition Frequency (fT): 25000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .035 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .16 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: X BAND
Maximum Operating Temperature: 150 Cel
Case Connection: EMITTER
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 4.5 V
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Collector-Base Capacitance: .24 pF
Peak Reflow Temperature (C): 260
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Pricing (USD)

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