Infineon Technologies - BFP520-E6433

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;

NXP Semiconductors' BFR520TT/R is a NPN RF BJT transistor with 9000 MHz fT. It's a single configuration amplifier for L Band applications, featuring 0.07 A IC and Gull Wing terminals. This small outline package has a plastic body, tin finish, and can withstand peak reflow at 260°C for up to 40s.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;

The NXP Semiconductors BFU590GX is a RF Small Signal BJT transistor with NPN polarity. It has a max operating temperature of 150°C and can handle a max collector-emitter voltage of 12V. This transistor is commonly used in amplifiers for L Band applications.

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; JEDEC-95 Code: TO-39;

The Onsemi BF224RLRE is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating up to 150 °C, it has a transition frequency of 850MHz, making it ideal for high-frequency applications in very high frequency bands. The transistor's through-hole package with cylindrical shape and bottom terminal position ensures easy installation and reliable performance.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;

The Onsemi MPSA10G is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for ultra-high frequency applications, it has a plastic/epoxy body, cylindrical package style, and operates up to 150 °C.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

NPN; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .65 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 30 V; No. of Elements: 1;

The NXP Semiconductors BFU550XRVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It has a max operating temperature of 150°C and can handle a collector-emitter voltage of 12V. With a transition frequency of 11GHz, it is ideal for L Band frequencies in small outline packages.

START405TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.045 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

NXP Semiconductors' BFG425W is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135 W, hFE of 50, and fT of 25 GHz. The package is small outline with gull wing terminals and can handle up to 4.5 V collector-emitter voltage.

Onsemi's 2SC5488A-TL-H is an NPN RF BJT with hFE of 90, fT of 5000 MHz, and IC of 0.07 A. Ideal for high-frequency applications in surface-mount configurations due to its low power dissipation and high operating temperature capability up to 150 °C.

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel; Reference Standard: MIL-19500;

PN918 by Onsemi is an NPN BJT transistor for amplifier applications. It offers a low VCEsat of 0.4V, high power gain of 15dB, and operates in the ultra-high frequency band up to 600MHz. With a max operating temperature of 150 °C, it is ideal for through-hole mounting in RF circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;