Infineon Technologies - BFQ790

  1. Home
  2. Infineon Technologies - BFQ790
BFQ790 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFQ790
Description RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Finish: Tin (Sn);
Datasheet BFQ790 Datasheet
In Stock741
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
741 - -

Popular Products

Category Top Products

BFR181WH6327XTSA1 by Infineon Technologies

BFR181WH6327XTSA1

Infineon Technologies

BFR181WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 3 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 8000 MHz, and IC of 0.02A. Ideal for amplifier circuits due to its small outline package style and high transition frequency.
BSX93 by STMicroelectronics

BSX93

STMicroelectronics

BSX93 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36W, operates up to 200 °C, and has a nominal transition frequency of 650MHz. Ideal for compact electronic circuits requiring efficient signal control.
PN3563 by Onsemi

PN3563

Onsemi

PN3563 by Onsemi is a NPN BJT for RF applications. Features include Gp of 14 dB, hFE of 20, and fT of 600 MHz. Ideal for amplifier circuits in the VHF band with a max operating temp of 150 °C.
2SC5245A-4-TL-E by Onsemi

2SC5245A-4-TL-E

Onsemi

The Onsemi 2SC5245A-4-TL-E is an NPN RF BJT with a max power dissipation of 0.15W, fT of 5000MHz, and hFE min of 60. Ideal for high-frequency applications in surface-mount configurations due to its low collector current and high operating temperature capabilities.
MPSH81RLRA by Onsemi

MPSH81RLRA

Onsemi

MPSH81RLRA by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low 0.85pF capacitance. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.
934047470115 by NXP Semiconductors

934047470115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Terminal Position: DUAL;
MPSH17RLRA by Onsemi

MPSH17RLRA

Onsemi

MPSH17RLRA by Onsemi is an NPN RF BJT transistor with a max fT of 800 MHz. It has a Pdiss of 0.625 W and VCEO of 15 V, ideal for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
2N3569 by Thomson-csf Semiconductors

2N3569

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .5 A; JESD-30 Code: O-XBCY-W4; JEDEC-95 Code: TO-105;
MCH4017-TL-H by Onsemi

MCH4017-TL-H

Onsemi

MCH4017-TL-H by Onsemi is an NPN RF BJT with 4 terminals, operating at 150°C max. It has a transition frequency of 10GHz, 0.1A collector current, and 12V collector-emitter voltage. Ideal for ultra-high frequency applications due to its small outline package and high power dissipation of 0.45W.
2N5583 by New Jersey Semiconductor Products

2N5583

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): CYLINDRICAL;
JANTX2N3866A by Raytheon Semiconductor

JANTX2N3866A

Raytheon Semiconductor

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Package Body Material: METAL;
FH105A-TR-E by Onsemi

FH105A-TR-E

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;
BFR92 by STMicroelectronics

BFR92

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
A5T3571 by Texas Instruments

A5T3571

Texas Instruments

A5T3571 by Texas Instruments is an NPN BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 20 and a nominal transition frequency of 1200 MHz, making it suitable for amplifier applications in the ultra-high-frequency band. The package style is cylindrical with a plastic/epoxy body material and wire terminals.
BF959G by Onsemi

BF959G

Onsemi

BF959G by Onsemi is a NPN RF BJT with 3 terminals. It operates in the VHF band, has hFE of 35, and can handle up to 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 700MHz and max collector current of 0.1A.
MPS3563RLRP by Onsemi

MPS3563RLRP

Onsemi

MPS3563RLRP by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at up to 150 °C, has a Vceo of 12V, and IC of 0.05A. Ideal for ultra-high frequency amplifier applications due to its low collector-base capacitance and single configuration in a cylindrical package.
JANTXV2N2907AL by Vpt Components

JANTXV2N2907AL

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; Peak Reflow Temperature (C): NOT SPECIFIED;
BFS481H6327XTSA1 by Infineon Technologies

BFS481H6327XTSA1

Infineon Technologies

Infineon's BFS481H6327XTSA1 is a NPN BJT transistor with 2 elements, ideal for amplifier applications in L Band frequencies. With max. collector-emitter voltage of 12V and fT of 8000MHz, it offers high performance in a small outline package. This surface-mount device has Gull Wing terminals and meets AEC-Q101 standard.
NSF2250WT1 by Onsemi

NSF2250WT1

Onsemi

NSF2250WT1 by Onsemi is a NPN BJT transistor with 3 terminals, operating at max 150 °C. It has a transition frequency of 2300 MHz and can handle up to 0.05 A collector current. Ideal for ultra high frequency amplifier applications in small outline packages.
934064609115 by NXP Semiconductors

934064609115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .03 A; Highest Frequency Band: KU BAND;