Infineon Technologies - BFR182WH6327

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BFR182WH6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFR182WH6327
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .035 A;
Datasheet BFR182WH6327 Datasheet
In Stock917
NAME DESCRIPTION
Nominal Transition Frequency (fT): 8000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .035 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
Minimum Operating Temperature: -65 Cel
No. of Terminals: 3
Maximum Power Dissipation (Abs): .25 W
Maximum Collector-Emitter Voltage: 12 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: TR, 7 INCH: 3000
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: .5 pF
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
917 $0.105 $96.285

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